ZnO is a wide band-gap (3.37 eV) II–VI compound semiconductor with hexagonal wurtzite structure. Zinc oxide films were deposited by electrode position, containing very low concentrations of sodium citrate and 30% hydrogen peroxide. Ammonium hydroxide is added to control the reaction. The structural analysis were initially studied with X-ray diffraction (XRD), scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDS). The average grain size is measured to be 48nm. Resistivity and carrier concentration of the as deposited film are observed to be 30 Ω-cm and 4.7×1017carriers/cm3respectively.
Prof. Dr. Bilal BİLGİN